Title :
Improving performance of microwave AlGaAs/GaAs HBTs using novel SiN x passivation process
Author :
Yoshioka, R.T. ; De Barros, L. E M, Jr. ; Diniz, J.A. ; Swart, J.W.
Author_Institution :
UNICAMP, Brazil
Abstract :
We report on the development of a silicon-nitride passivation film and its application to heterojunction bipolar transistors (HBT). The electric characterization of the semi-insulating film shows excellent passivation properties with measured charge density on the order of 5×1010 cm-2, lowest, to our knowledge, reported for GaAs. Applied to HBT structure the passivation reduces in more than 75% the extrinsic base surface recombination current guaranteeing transistor gain even at 10 nA collector current levels
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; passivation; silicon compounds; AlGaAs-GaAs; AlGaAs/GaAs microwave HBT; SiN; SiNx passivation; charge density; electrical characteristics; gain; semi-insulating film; surface recombination current; Bipolar transistors; Doping; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Insulation; Passivation; Plasma applications; Plasma temperature; Silicon compounds;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867064
