A new model for E-mode power PHEMT and its optimum loading operation

Author

Wei, C.J. ; Tkachenko, Y.A. ; Bartle, D.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

271

Abstract

Optimum loading for a power E-mode PHEMT is determined by a systematic harmonic load-pull simulation. The simulation uses a modified Angelov-Statz model that can accurately predict DC, small-signal RF, and power performance of the devices. The optimum second harmonic loading is found at open circuit and the optimum third harmonic is at the third quadrant, for a 2 mm device, which is about 1π210. Measured versus modeled results show very good agreement and therefore verified the model. The simulation predicts that as high as 80% power added efficiency can be achieved with E-mode PHEMT under optimum source and load termination with harmonic tunings

Keywords

UHF field effect transistors; capacitance; harmonics; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device models; 0.2 to 15.2 GHz; 0.7 micron; 0.9 GHz; 2 mm; 80 percent; DC performance; E-mode power PHEMT; PHEMT model; harmonic load-pull simulation; modified Angelov-Statz model; optimum loading operation; optimum second harmonic loading; optimum third harmonic loading; power added efficiency; power performance; pseudomorphic HEMT; small-signal RF performance; Capacitance measurement; Circuit simulation; Dispersion; PHEMTs; Power system harmonics; Power system modeling; Predictive models; Radio frequency; Voltage; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867107

Filename

867107