DocumentCode
355999
Title
Design of monolithic RF power amplifier using bulk BiCMOS process
Author
Chan, W.C. ; Mok, Philip K T ; Sin, Johnny K O ; Ng, W.T.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Volume
1
fYear
1999
fDate
1999
Firstpage
10
Abstract
A low-voltage monolithic 900 MHz power amplifier has been fabricated in a commercial 0.8 μm bulk BiCMOS process with an integrated output tuned circuit. The tuned circuit is implemented by a monolithic inductor of 2.6 nH with 54 μm metal width. The output power of the amplifier is 14 dBm
Keywords
BiCMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; circuit tuning; inductors; 0.8 micron; 54 micron; 900 MHz; bulk BiCMOS process; integrated output tuned circuit; metal width; monolithic RF power amplifier; monolithic inductor; output power; Active inductors; BiCMOS integrated circuits; Costs; Gallium arsenide; Power amplifiers; RLC circuits; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location
Las Cruces, NM
Print_ISBN
0-7803-5491-5
Type
conf
DOI
10.1109/MWSCAS.1999.867196
Filename
867196
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