• DocumentCode
    3560489
  • Title

    Excitonic absorption in InGaP/GaAs multiquantum wells

  • Author

    Patrizi, Gary A. ; Lee, H.Y. ; Hafich, M.J. ; Silvestre, P. ; Robinson, G.Y.

  • Author_Institution
    Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
  • Volume
    27
  • Issue
    25
  • fYear
    1991
  • Firstpage
    2363
  • Lastpage
    2364
  • Abstract
    Multiquantum well p-i-n photodiodes have been fabricated using InGaP/GaAs grown by gas-source MBE. The room temperature photocurrent spectrum of the diodes exhibits strong excitonic absorption at wavelengths near 860 nm, and a large change in the photocurrent is observed with applied bias.
  • Keywords
    III-V semiconductors; electroabsorption; gallium arsenide; gallium compounds; indium compounds; p-i-n diodes; photodiodes; semiconductor quantum wells; 860 nm; InGaP-GaAs; MQW; PIN diodes; excitonic absorption; gas-source MBE; multiquantum wells; p-i-n photodiodes; room temperature photocurrent spectrum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911464
  • Filename
    121361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560489