Title :
Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters
Author :
Yao, I. Chuan ; Lin, Pang ; Tseng, Tseung-Yuen
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2012 12:00:00 AM
Abstract :
Fabrication, optical, and field emission properties of ZnO nanorod, nanopagoda, and nanotip emitters were studied. The ZnO nanotip emitters are prepared by using combination of solution method and oxygen plasma treatment. All the emitters exhibit a highly c-axis preferred orientation crystalline structure. The nanopagoda and nanotip emitters have turn-on fields of 1.43 and 1.07 V/μm, respectively, under 1 μA/cm2 and field enhancement factors of 3681 and 4735 at 25 °C, respectively. The nanotip emitters with tip angle of 20° and number density of 10 emitters/μm2 have very stable emission at 25 °C over 2 × 104 s and successive operation between the 25°C and 100 °C over 5000 s. Our finding provides an effective route for practical applications in flat panel display and light-emitting device in the future.
Keywords :
II-VI semiconductors; crystal structure; field emitter arrays; nanofabrication; nanorods; plasma materials processing; semiconductor device reliability; wide band gap semiconductors; zinc compounds; ZnO; ZnO nanopagoda current emitter reliability; ZnO nanorod current emitter reliability; ZnO nanotip current emitter reliability; field emission properties; field enhancement factors; flat panel display; highly c-axis preferred orientation crystalline structure; light-emitting device; number density; optical properties; oxygen plasma treatment; solution method; temperature 25 degC to 100 degC; time 5000 s; tip angle; turn-on fields; Current density; Educational institutions; Morphology; Nanostructures; Plasmas; Temperature measurement; Zinc oxide; Field emission properties; ZnO nanorod; nanopagoda; nanotip; oxygen plasma treatment; reliability;
Journal_Title :
Nanotechnology, IEEE Transactions on
Conference_Location :
4/19/2012 12:00:00 AM
DOI :
10.1109/TNANO.2012.2195502