DocumentCode :
3561069
Title :
A K-Band High-Voltage Four-Way Series-Bias Cascode Power Amplifier in 0.13 
m CMOS
Author :
Lee, Jong-Wook ; Kim, Byung-Sung
Author_Institution :
Sch. of Electron. & Inf., Kyung Hee Univ., Suwon, South Korea
Volume :
20
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
408
Lastpage :
410
Abstract :
This letter reports a K-band high-voltage power amplifier delivering 100 mW output power in CMOS technology. The amplifier used series-bias of four cascode power cells to increase operating voltage and achieve high output power. The two-stage series-bias amplifier showed a maximum small-signal gain of 19.5 dB, an output power of 20 dBm, and a PAE of 12.4% at 21 GHz. The results of this study will be useful for realizing a fully integrated single-chip transceiver at microwave and millimeter-wave frequencies.
Keywords :
CMOS integrated circuits; MMIC power amplifiers; CMOS technology; K-band high-voltage four-way power amplifier; efficiency 12.4 percent; frequency 21 GHz; gain 19.5 dB; integrated single-chip transceiver; microwave frequency; millimeter-wave frequency; power 100 mW; series-bias cascode power amplifier; size 0.13 mum; two-stage series-bias amplifier; CMOS; K-band; power amplifier; series-bias;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
Conference_Location :
6/7/2010 12:00:00 AM
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2010.2049442
Filename :
5481984
Link To Document :
