Title :
High density RF MIM capacitors using high-/spl kappa/ AlTaO/sub x/ dielectrics
Author :
Huang, C.H. ; Yang, M.Y. ; Chin, A. ; Chunxiang Zhu ; Li, M.F. ; Dim-Lee Kwong
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Very high capacitance density of 10 fF//spl mu/m/sup 2/ is measured using high-/spl kappa/ AlTaO/sub x/, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime.
Keywords :
MIM devices; S-parameters; aluminium compounds; capacitors; dielectric losses; tantalum compounds; 10 kHz to 30 GHz; AlTaO; RF MIM capacitor; S-parameters; VLSI back-end integration; capacitance density; frequency dependence; high-/spl kappa/ AlTaO/sub x/ dielectric; loss tangent; voltage dependence; Capacitance; Circuits; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Radio frequency; Scattering parameters; Very large scale integration; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210987
