Title :
A new scaleable low frequency noise model for field-effect transistors used in resistive mixers
Author :
Margraf, M. ; Boeck, G.
Author_Institution :
Microwave Group, Berlin Univ. of Technol., Germany
Abstract :
A new scaleable low-frequency noise model for cold-FETs (U/sub ds/ /spl ap/ 0 V) is proposed. The model was tested using the Fujitsu HEMT FHC40LG in resistive mixer circuits where low-frequency noise (1/f-noise and generation-recombination noise) occurs due to the self-mixing process. Describing the noise of the FET channel as resistance fluctuations the model explains the existence of noise in absence of a DC current. A method for implementing resistance noise in common CAE programs is also shown. The model yields excellent-agreement with simulation results.
Keywords :
1/f noise; MOSFET; Schottky gate field effect transistors; electronic engineering computing; equivalent circuits; high electron mobility transistors; junction gate field effect transistors; microwave field effect transistors; microwave mixers; semiconductor device models; semiconductor device noise; 1/f-noise; CAE programs; FET channel noise; FHC40LG; Fujitsu HEMT; G-R noise; cold-FETs; field-effect transistors; generation-recombination noise; low-frequency noise model; resistance fluctuations; resistive mixer circuits; scaleable LF noise model; self-mixing process; 1f noise; Circuit noise; Circuit simulation; Circuit testing; Computer aided engineering; HEMTs; Low-frequency noise; Microwave FETs; Noise generators; Voltage fluctuations;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211000
