Title :
Bendable organic memristors in a crossbar array: Applications to information storage
Author_Institution :
Fac. of Electr.-Electron. Eng., Univ. of Transp. & Commun., Hanoi, Vietnam
Abstract :
This article demonstrates a bendable 256-bit organic memristor in a crossbar array fabricated from a composite of fullerene organic semiconductor and polymer matrix. Electrical measurements indicated that the memristor cell can be reversibly switched at a voltage pulse of -4 or 4 V for 1 μs. The operating mechanism was attributed to the charge storage of fullerene. The memristor exhibited highly reliable with the stable retention time characteristics with a large on/off current ratio of five orders of magnitude at 0.5 V. These obtained results suggest that the memristor based on fullerene can be utilized for storing information in bendable electronics.
Keywords :
circuit reliability; filled polymers; fullerenes; memristors; organic semiconductors; bendable electronics; bendable organic memristor; composite material; crossbar array; electrical measurement; fullerene organic semiconductor; large on-off current ratio; polymer matrix; reliable; time 1 mus; voltage -4 V; voltage 0.5 V; voltage 4 V; word length 256 bit; Arrays; Memristors; Nonvolatile memory; Plastics; Polymers; Programming; Substrates; ReRAM; bendable electronics; next generation non-volatile memory; organic memristor; organic semiconductor; threshold voltage;
Conference_Titel :
Advanced Technologies for Communications (ATC), 2014 International Conference on
Print_ISBN :
978-1-4799-6955-5
DOI :
10.1109/ATC.2014.7043351
