DocumentCode
3563748
Title
Fabrication of heavily boron doped mechanical resonators
Author
Kakushima, K. ; Sarnet, Tanel ; Kerrien, G. ; Nagashio, M. ; Debarre, D. ; Boulmer, J. ; Noguchi, T. ; Bourouina, T. ; Kawakatsu, H. ; Fujita, H.
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
Volume
1
fYear
2003
Firstpage
328
Abstract
Heavily boron-doped single-crystalline silicon bridges have been fabricated and their resonances have been characterized. Silicon was doped with boron by shooting XeCl laser in BCl/sub 3/ precursor gas. Thanks to the high tensile stress induced by doping, the resonant frequency of the bridge shifted to more than 10 times higher than that of stress-free structure. Stress in the bridge (or the resonant frequency) can be controlled by changing the condition of doping.
Keywords
boron; elemental semiconductors; internal stresses; laser materials processing; micromechanical resonators; semiconductor doping; silicon; BCl/sub 3/ precursor gas; Si; XeCl laser; doping; heavily boron doped mechanical resonators; resonant frequency; single-crystalline silicon bridges; stress-free structure; tensile stress; Boron; Bridges; Doping; Gas lasers; Optical device fabrication; Resonance; Resonant frequency; Silicon; Stress control; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Print_ISBN
0-7803-7731-1
Type
conf
DOI
10.1109/SENSOR.2003.1215319
Filename
1215319
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