DocumentCode :
3564760
Title :
The Memory-Conservation Theory of Memristance
Author :
Gale, Ella
Author_Institution :
Unconventional Comput. Group, Bristol Robot. Lab., Bristol, UK
fYear :
2014
Firstpage :
599
Lastpage :
604
Abstract :
The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua´s equations, which lack material device properties, or using Strukov´s phenomenological model (or models derived from it), which deviates from Chua´s definitions due to the lack of a magnetic flux term. It is shown that by modelling the magneto statics of the memory-holding ionic current (oxygen vacancies in the Strukov memristor), the memristor´s magnetic flux can be identified as the flux arising from the ions. This leads to a novel theory of memristance consisting of two components: 1. A memory function which describes how the memristance, as felt by the ions, affects the conducting electrons located in the ´on´ part of the device, 2. A conservation function which describes the time-varying resistance in the ´off´ part of the device. This model allows for a straight-forward incorporation of the ions within the electronic theory and relates Chua´s constitutive definition of a memristor with device material properties for the first time.
Keywords :
Chua´s circuit; magnetic flux; magnetostatics; memristors; Chua´s constitutive definition; Chua´s equations; Strukov memristor; Strukov´s phenomenological model; circuit element; computer memory; conservation function; electronic theory; magnetostatics; material device properties; memory function; memory-conservation theory; memory-holding ionic current; memristance; memristor magnetic flux; neuromorphic computing; nonlinear electronics; oxygen vacancies; time-varying resistance; Equations; Magnetic flux; Magnetic separation; Magnetostatics; Materials; Mathematical model; Memristors; ReRAM; ionic-electronics; magnetostatics; materials modelling; memristor; model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Modelling and Simulation (UKSim), 2014 UKSim-AMSS 16th International Conference on
Print_ISBN :
978-1-4799-4923-6
Type :
conf
DOI :
10.1109/UKSim.2014.57
Filename :
7046136
Link To Document :
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