• DocumentCode
    3565048
  • Title

    Contact resistance reduction using Fermi level de-pinning layer for MoS2 FETs

  • Author

    Woojin Park ; Yonghun Kim ; Sang Kyung Lee ; Ukjin Jung ; Jin Ho Yang ; Chunhum Cho ; Yun Ji Kim ; Sung Kwan Lim ; In Seol Hwang ; Han-Bo-Ram Lee ; Byoung Hun Lee

  • Author_Institution
    School of Materials Science and Engineering, Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • fYear
    2014
  • Abstract
    Achieving a low contact resistance for 2D materials is a critical challenge for device applications. In this work, the contact resistance of MoS2 FETs has been drastically reduced by five times from the reference data using an optimized TiO2 Fermi level de-pinning layer which reduced the effective Schottky barrier height to 0.1 eV. As a result, a very low contact resistance ~5.4 kΩ·μm was achieved without any doping technique.
  • Keywords
    Fermi level; Schottky barriers; contact resistance; field effect transistors; molybdenum compounds; titanium compounds; 2D materials; MoS2 FET; MoS2; Schottky barrier height; TiO2; contact resistance reduction; electron volt energy 0.1 eV; optimized TiO2 Fermi level depinning layer; Aluminum oxide; Contact resistance; Doping; Field effect transistors; Materials; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7046986
  • Filename
    7046986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565048