Title :
Performance evaluation of InGaAs, Si, and Ge nFinFETs based on coupled 3D drift-diffusion/multisubband boltzmann transport equations solver
Author :
Seonghoon Jin ; Anh-Tuan Pham ; Woosung Choi ; Nishizawa, Yutaka ; Young-Tae Kim ; Keun-Ho Lee ; Park, Youngkwan ; Eun Seung Jung
Author_Institution :
Samsung Semicond. Inc., San Jose, CA, USA
Abstract :
This paper presents a simulation study of InGaAs, Si, and Ge nFinFETs by solving the coupled drift-diffusion (DD) and the multisubband Boltzmann transport equation (MSBTE) in 3D domains. The effects of the quasi-ballistic transport, source/drain contact resistances, and band-to-band tunneling (BTBT) on the device performance are studied.
Keywords :
Boltzmann equation; III-V semiconductors; MOSFET; Poisson equation; contact resistance; elemental semiconductors; germanium; indium compounds; silicon; 3D drift-diffusion; BTBT; Ge; InGaAs; MSBTE; Si; band-to-band tunneling; multisubband Boltzmann transport equation; nFinFET; quasi-ballistic transport; source-drain contact resistances; Indium gallium arsenide; Logic gates; Mathematical model; Scattering; Silicon; Three-dimensional displays;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047005
