Title :
Solution-processed poly-Si TFTs fabricated at a maximum temperature of 150°C
Author :
Trifunovic, M. ; Zhang, J. ; van der Zwan, M. ; Ishihara, R.
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands
Abstract :
Printing liquid silicon devices using cyclopentasilane as the precursor have led to solution processed devices with high mobilities. The fabrication process, however, required a relatively high process temperature of 350°C, incompatible to inexpensive plastics. A novel processing method is presented that decreases the maximum processing temperature of poly-Si TFTs to 150°C, compatible to low-cost plastics and paper, by using a XeCl excimer laser treatment that would directly transform a solution with polysilane chains into solid polycrystalline silicon. Mobilities as high as 23.5 and 21.0cm2/Vs were obtained for the PMOS and NMOS devices respectively.
Keywords :
elemental semiconductors; excimer lasers; silicon; thin film transistors; NMOS devices; PMOS devices; Si; XeCl; XeCl excimer laser treatment; cyclopentasilane; fabrication process; liquid silicon device printing; low-cost papers; low-cost plastics; maximum processing temperature; polysilane chains; relatively high-process temperature; solid polycrystalline silicon; solution-processed polysilicon TFT; temperature 150 degC; temperature 350 degC; Fabrication; Films; Lasers; MOS devices; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047114
