DocumentCode :
3565220
Title :
Nonlinear scattering function modeling based on harmonic balance method
Author :
Feng, Ni ; Wang, Jiali ; Lu, Sun
Author_Institution :
Dept. of Meas. Control Eng. & Instrum., Xidian Univ., Xi´´an
Volume :
1
fYear :
2008
Firstpage :
257
Lastpage :
260
Abstract :
The classic modeling method based on s-parameter measurement cannot describe the nonlinear characteristic of the components accurately. Nonlinear scattering function model can describe the nonlinear characteristic from the perspective of qualitative and quantitative. In this paper, a new concept of nonlinear scattering function is presented. Based on harmonic balance analysis, nonlinear scattering function model for microwave power components is extracted. The analysis of a power MESFET is used here as a vehicle to illustrate the concept of nonlinear scattering function and the new modeling method.
Keywords :
S-parameters; Schottky gate field effect transistors; harmonic analysis; harmonic balance method; nonlinear scattering function modeling; power MESFET; s-parameter measurement; Circuits; Frequency domain analysis; Harmonic analysis; MESFETs; Microwave technology; Power system harmonics; Radar scattering; Scattering parameters; Vehicles; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
Type :
conf
DOI :
10.1109/ICMMT.2008.4540355
Filename :
4540355
Link To Document :
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