Title :
Optimization metrics for Phase Change Memory (PCM) cell architectures
Author :
Boniardi, M. ; Redaelli, A. ; Cupeta, C. ; Pellizzer, F. ; Crespi, L. ; D´Arrigo, G. ; Lacaita, A.L. ; Servalli, G.
Author_Institution :
R&D, Micron Semicond. Italia s.r.l., Agrate Brianza, Italy
Abstract :
We reported here a comparative study of PCM cell architectures. The developed architectures are considered in a program/read efficiency framework and in an integration context. The Self-Heating approach is slightly more efficient, owing to heat generation happening directly within GST, but shows hazardous technology implementation with Ge2Sb2Te5, due to high aspect ratios. The heater-based Wall architecture represents the best and easiest solution for PCM from the technology standpoint: it features relaxed aspect ratios and benefits from lots of geometry-based knobs for optimization with slightly higher process complexity and slightly lower efficiency. Strengths and drawbacks of the different architectures are schematically reported in Fig. 14.
Keywords :
antimony compounds; germanium compounds; memory architecture; optimisation; phase change memories; Ge2Sb2Te5; PCM cell architectures; optimization metrics; phase change memory cell architectures; self-heating wall architecture; Computer architecture; Microprocessors; Optimization; Phase change materials; Resistance; Resistance heating;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047131