• DocumentCode
    3565231
  • Title

    55-µA GexTe1−x/Sb2Te3 superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures

  • Author

    Takaura, N. ; Ohyanagi, T. ; Tai, M. ; Kinoshita, M. ; Akita, K. ; Morikawa, T. ; Shirakawa, H. ; Araidai, M. ; Shiraishi, K. ; Saito, Y. ; Tominaga, J.

  • Author_Institution
    Low-power Electron. Assoc. & Project, Tsukuba, Japan
  • fYear
    2014
  • Abstract
    GexTe1-x/Sb2Te3 superlattice topological-switching random access memory (TRAM) was developed. Set and reset currents of 55 μA, the lowest for an ULSI-grade device, were obtained. TEM analyses of the Ge-Te structures and novel superlattice fabrication enabled us to reveal the retention, endurance, and electrical characteristics of TRAM for the first time.
  • Keywords
    ULSI; antimony compounds; germanium compounds; integrated circuit testing; network topology; random-access storage; superlattices; switching circuits; transmission electron microscopy; Ge-Te; GexTe1-x-Sb2Te3; TEM analyses; TRAM; ULSI-grade device; atomic arrangement; current 55 muA; reset currents; superlattice fabrication; superlattice topological-switching random access memory; transmission electron microscopy; Atomic layer deposition; Electrodes; Films; Phase change random access memory; Resistance; Superlattices; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047132
  • Filename
    7047132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565231