High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure

Author

Kuan-Chang Chang ; Rui Zhang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Tian-Jian Chu ; Hsin-Lu Chen ; Chih-Cheng Shih ; Chih-Hung Pan ; Yu-Ting Su ; Pei-Jung Wu ; Sze, Simon M.

Author_Institution

Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2014

Abstract

Double-ended graphene oxide (GO) doped silicon oxide based (SOB) via-structure RRAM with self-protective ability is reported in this paper. The fabricated RRAM exhibits comprehensive outstanding performance including switching speed (~30ns), endurance property (>10¹² cycles), read disturbance immunity (>10¹⁰ cycles) and retention (>10⁴s at 125°C, >144 days at room temperature). Combined with the applicability of complementary resistive switching structure and whole-cycle multi-bit operation, it is quite promising for this RRAM to be applied in future mass productions.

Keywords

graphene; graphene devices; memristors; resistive RAM; silicon compounds; vias; GO doped silicon oxide; SOB via-structure RRAM; SiO₂:CO; complementary resistive switching structure; double-ended graphene oxide; endurance property; read disturbance immunity; reliable multifunctional graphene oxide doped memristor; retention; self-protective compliance current structure; switching speed; temperature 125 C; whole-cycle multibit operation; Chemicals; Educational institutions; Graphene; Performance evaluation; Reliability; Sun; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047161

Filename

7047161