Title :
Switching investigations on a SiC MOSFET in a TO-247 package
Author :
Anthon, Alexander ; Hernandez, Juan C. ; Zhe Zhang ; Andersen, Michael A. E.
Author_Institution :
Dept. of Electr. Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97.7 % is reached.
Keywords :
MOSFET; field effect transistor switches; semiconductor device packaging; silicon compounds; wide band gap semiconductors; MOSFET; SiC; T-type inverter; TO-247 package; circuit layout; critical parasitic inductance; power 3 kW; switching behavior; switching energy; switching loss; Inductance; Insulated gate bipolar transistors; Logic gates; MOSFET; Silicon; Silicon carbide; Switches; IGBT; SiC MOSFET; Switching Energy; multilevel inverter;
Conference_Titel :
Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE
DOI :
10.1109/IECON.2014.7048754