DocumentCode :
3566486
Title :
A fully-integrated broadband amplifier MMIC employing a novel chip size package
Author :
Young Yun ; Nishijima, M. ; Katsuno, M. ; Ishida, H. ; Minagawa, K. ; Nobusada, T. ; Tanaka, T.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume :
1
fYear :
2002
Firstpage :
409
Abstract :
In this work, using a novel RF-CSP, a broadband amplifier MMIC including all the matching and biasing components was developed for Ku and K band applications. To integrate DC biasing components on the MMIC, an STO (SrTiO/sub 3/) capacitor was employed. By employing an anisotropic conductive film for the RF-CSP, the MMIC fabrication process became very simple and cost effective. The packaged amplifier MMIC exhibited good RF performance in a wide frequency range. This work is the first report for fully-integrated Ku or K band MMICs which have all the biasing and matching components.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; chip scale packaging; field effect MMIC; gallium arsenide; impedance matching; wideband amplifiers; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ substrate; DC biasing components; GaAs; GaAs MODFET; K band; Ku band; RF performance; RF-CSP; SrTiO/sub 3/; SrTiO/sub 3/ capacitor; anisotropic conductive film; broadband amplifier MMIC; chip size package; flip-chip GaAs MMIC; matching components; packaged amplifier MMIC; Bonding; Broadband amplifiers; Costs; Electrodes; Fabrication; Gallium arsenide; Gold; MMICs; Packaging; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
ISSN :
0149-645X
Print_ISBN :
0-7803-7239-5
Type :
conf
DOI :
10.1109/MWSYM.2002.1011642
Filename :
1011642
Link To Document :
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