• DocumentCode
    3567028
  • Title

    A low-dark-current InGaAs photodetector made on metamorphic InGaP buffered GaAs substrate

  • Author

    Lin, Chi-Kuan ; Kuo, Hao-Chung ; Lin, Gong-Ru ; Feng, M.

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    5
  • fYear
    2005
  • Abstract
    A novel top-illuminated In0.53Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP (0.51-11 W/Hz0.5, and 7.5 GHz, respectively.
  • Keywords
    gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; GaAs; In0.53Ga0.47As; In0.53Ga0.47As p-i-n photodiode; InxGa1-xP; low-dark-current InGaAs photodetector; metamorphic InGaP buffered GaAs substrate; Buffer layers; Dark current; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optoelectronic devices; Photodetectors; Photodiodes; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
  • Print_ISBN
    1-55752-783-0
  • Type

    conf

  • DOI
    10.1109/OFC.2005.193150
  • Filename
    1499743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3567028