High gain amplifiers in flexible self-aligned a-IGZO thin-film-transistor technology

Author

Shabanpour, R. ; Meister, T. ; Ishida, K. ; Petti, L. ; Munzenrieder, N. ; Salvatore, G.A. ; Boroujeni, B.K. ; Carta, C. ; Troster, G. ; Ellinger, F.

Author_Institution

Tech. Univ. Dresden, Dresden, Germany

fYear

2014

Firstpage

108

Lastpage

111

Abstract

To our knowledge, this paper presents the first high-gain amplifiers fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. For the common source amplifier applying positive feedback a voltage gain of 17 dB, a bandwidth of 79 kHz and a DC power of only 0.76 mW were measured. For the cascode amplifier a voltage gain of 25 dB voltage gain, a bandwidth of 220 kHz and a DC power of 2.32 mW were measured. The simulations based on a RPI-aTFT model are compared with measurements. The chip areas are 8 and 10 mm², respectively.

Keywords

feedback amplifiers; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; RPI-aTFT model; amorphous TFT technology; bandwidth 220 kHz; bandwidth 79 kHz; cascode amplifier; common source amplifier; flexible self-aligned thin-film-transistor technology; gain 17 dB; gain 25 dB; high-gain amplifiers; positive feedback; power 0.76 mW; power 2.32 mW; Bandwidth; Gain; Gain measurement; Semiconductor device measurement; Thin film transistors; Voltage measurement; Analog circuits; amplifiers; flexible electronics; high gain amplifiers; thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on

Type

conf

DOI

10.1109/ICECS.2014.7049933

Filename

7049933