A 1.9 GHz fully integrated PHS power amplifier with a novel automatic gate-bias control circuit [MESFET ICs]

Author

Singh, R. ; Nakamura, H. ; Khen-Sang Tan ; Shibata, J.

Author_Institution

Inst. of Microelectron., Singapore

Volume

2

fYear

1998

Firstpage

431

Abstract

A 3.6 V PHS power amplifier (PA) GaAs MMIC with on-chip matching circuits and a novel automatic gate-bias control circuit is reported. It obviates the need for cumbersome and expensive post fabrication dc bias current tuning. The 1.02/spl times/1.73 mm/sup 2/ SSOP-16 plastic packaged chip, meets all PHS specifications, and the performance is comparable to the PA without the bias control circuit. The measured PA performance is presented for deep, shallow and typical pinch-off voltage cases confirming the robustness and suitability of the proposed bias control circuit.

Keywords

MESFET integrated circuits; MMIC power amplifiers; UHF power amplifiers; personal communication networks; 1.9 GHz; 3.6 V; MESFET ICs; MMIC; PHS power amplifier; UHF power amplifiers; automatic gate-bias control circuit; on-chip matching circuits; pinch-off voltage; robustness; Automatic control; Circuit optimization; Fabrication; Gallium arsenide; MMICs; Plastic packaging; Power amplifiers; Robust control; Semiconductor device measurement; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705025

Filename

705025