DocumentCode
3569656
Title
Further investigations on traps stabilities in random telegraph signal noise and the application to a novel concept physical unclonable function (PUF) with robust reliabilities
Author
Jiezhi Chen ; Tanamoto, Tetsufumi ; Noguchi, Hiroki ; Mitani, Yuichiro
Author_Institution
Adv. LSI Technol. Lab., Corp. R&D Center, Kawasaki, Japan
fYear
2015
Abstract
A novel physical unclonable function (PUF) that based on random telegraph signal noise (RTN) is proposed and studied in this work. Firstly, systematical experiments have been done in ultra-scaled devices with various gate stack structures. It is found for the first time that strong correlations between trap time constants and thermal activation energies universally exist in all devices, no matter for hole traps or for electron traps, in high-k dielectrics or in SiO2. More importantly, time constants are stress free and quite stable under electrical stressing. Then, with proposed transient RTN approaches and algorithms, RTN related traps can be detected in a short time and directly utilized in PUF designs. The hamming distance (HD) of intra-PUF and inter-PUF is experimentally characterized, showing excellent endurance properties with no less than 1E6 ID reading cycles.
Keywords
electron traps; hole traps; integrated circuit design; integrated circuit noise; integrated circuit reliability; security of data; electron trap; gate stack structures; high-k dielectric; hole trap; physical unclonable function; random telegraph signal noise; robust reliability; thermal activation energy; trap time constants; traps stability; Correlation; Couplings; Electron traps; Logic gates; Robustness; Temperature measurement; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSI Technology), 2015 Symposium on
ISSN
0743-1562
Type
conf
DOI
10.1109/VLSIT.2015.7223695
Filename
7223695
Link To Document