High frequency AC electromigration lifetime measurements from a 32nm test chip

Author

Chen Zhou ; Xiaofei Wang ; Rita Fung ; Shi-Jie Wen ; Wong, Rick ; Kim, Chris H.

Author_Institution

Dept. of ECE, Univ. of Minnesota, Minneapolis, MN, USA

fYear

2015

Abstract

A test circuit for studying Electromigration (EM) effects under realistic high frequency AC stress was implemented in a 32nm High-k Metal Gate (HKMG) process. Four different stress patterns (DC, pulsed DC, square AC and real AC) can be generated using on-chip circuits. Local heaters are used to raise the die temperature to >300°C for accelerated testing. Experiment results over 52.7 hours show no AC stress induced failures under 325°C, 1.5V (driver supply) at 200 MHz and 900 MHz. However, the pre-AC stress had an impact on the DC EM distribution.

Keywords

electromigration; integrated circuit testing; life testing; stress analysis; AC stress induced failure; EM effect; HKMG process; accelerated testing; die temperature; electromigration effect; frequency 200 MHz; frequency 900 MHz; heater; high frequency AC electromigration lifetime measurement; high frequency AC stress; high-k metal gate process; on-chip circuit; size 32 nm; stress pattern; test chip; voltage 1.5 V; Electrical resistance measurement; Heating; Resistance; Semiconductor device measurement; Stress; Temperature measurement; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI Technology), 2015 Symposium on

ISSN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2015.7223696

Filename

7223696