Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

Author

Majhi, P. ; Wen, H.-C. ; Alshareef, H. ; Choi, K. ; Harris, R. ; Lysaght, P. ; Luan, H. ; Senzaki, Y. ; Song, S.C. ; Lee, B.H. ; Ramiller, C.

Author_Institution

SEMATECH, Austin, TX, USA

fYear

2005

Firstpage

69

Lastpage

72

Abstract

An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the high-k metal gate stacks are discussed.

Keywords

CMOS integrated circuits; amorphous semiconductors; dielectric materials; electrodes; hafnium; work function; amorphous metal gate material; dual metal CMOS; electrical stability; hafnium-based electrodes; metal gate electrodes; physical stability; work function; Channel bank filters; Dielectric substrates; Electrodes; Extrapolation; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Robust stability; Silicon; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on

Print_ISBN

0-7803-9081-4

Type

conf

DOI

10.1109/ICICDT.2005.1502594

Filename

1502594