• DocumentCode
    3572035
  • Title

    The Simulation of Charge Storage in I2L Circuits

  • Author

    M?¼ller, R?¼diger ; Ablabmeier, Ulrich

  • Author_Institution
    SIEMENS AG, Research Laboratories, Munich, W.-Germany
  • fYear
    1977
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    A new method for simulating charge storage effects in I2L circuits with existing CAD programs will be presented. It takes into account the different current gain dependence of saturation current and transit time. Calculated results are in very good agreement to measurements.
  • Keywords
    Capacitance; Charge carrier density; Charge carrier processes; Circuit simulation; Delay effects; Diodes; Doping; Laboratories; Virtual private networks; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
  • Print_ISBN
    380071132X
  • Type

    conf

  • Filename
    5435038
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572035