DocumentCode
3572269
Title
Avoiding dislocations in ion-implanted silicon
Author
Saris, F.W. ; Custer, J.S. ; Schreutelkamp, R.J. ; Liefting, R.J. ; Wijburg, R. ; Wallinga, H.
Author_Institution
Fom Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
fYear
1992
Firstpage
357
Lastpage
362
Abstract
Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.
Keywords
Atomic measurements; Implants; Impurities; Ion implantation; Microelectronics; Physics; Rapid thermal annealing; Silicon; Thermal degradation; Thermal engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Print_ISBN
444894780
Type
conf
Filename
5435117
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