Title :
Measurement of Wafer Temperature by Interference
Author :
Bollmann, D. ; Haberger, K.
Author_Institution :
Fraunhofer-Institute for Solid State Technology, Hansastr. 27 d, D-8000 M?ƒ??nchen 21, Germany
Abstract :
A new method of measuring the temperature of a silicon wafer in an RTP-Reaktor is described. It is based on the thermal expansion of the bulk silicon that is measured by a laser-interferometer. Thus it avoids the usual problems of a pyrometer like changing optical properties of the wafer surface. The method is especially suitable for processes below 600°C.
Keywords :
Interference; Laser beams; Optical interferometry; Optical scattering; Phase measurement; Pollution measurement; Silicon; Surface emitting lasers; Temperature measurement; Thermal engineering;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
