• DocumentCode
    3572293
  • Title

    Measurement of Wafer Temperature by Interference

  • Author

    Bollmann, D. ; Haberger, K.

  • Author_Institution
    Fraunhofer-Institute for Solid State Technology, Hansastr. 27 d, D-8000 M?ƒ??nchen 21, Germany
  • fYear
    1992
  • Firstpage
    383
  • Lastpage
    386
  • Abstract
    A new method of measuring the temperature of a silicon wafer in an RTP-Reaktor is described. It is based on the thermal expansion of the bulk silicon that is measured by a laser-interferometer. Thus it avoids the usual problems of a pyrometer like changing optical properties of the wafer surface. The method is especially suitable for processes below 600°C.
  • Keywords
    Interference; Laser beams; Optical interferometry; Optical scattering; Phase measurement; Pollution measurement; Silicon; Surface emitting lasers; Temperature measurement; Thermal engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572293