Aging study of optimized submicron n-MOSFET´s (DC, AC and alternating stress conditions): correlation between charge pumping and classical parameters

The effects of static, dynamic and alternating stress conditions on the degradation rate of 0.8¿m LDD N-channel MOS transistors have systematically been compared. The parameters used in monitoring the aging were the threshold voltage, transconductance and charge pumping current. The results suggest that, at least for our devices, the degradation induced by a.c. stress can not be explained with a quasi-static model.