Title :
High-speed, high-quality WEB NPN transistors with phosphorus emitters
Author :
Nanver, L.K. ; Goudena, E.J.G. ; van Zeijl, H.W.
Author_Institution :
Delft Institute for Microelectronics and Submicrontechnology. DIMES IC Process Research Sector, Delft University of Technology, P.O.Box 5053, 2600 GB Delft, The Netherlands
Abstract :
Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narrow, highly doped base can be formed.
Keywords :
Annealing; Capacitance; Degradation; Doping profiles; Epitaxial layers; Leakage current; Low voltage; Microelectronics; Tail; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
