Title :
A 0.8 μm BiCMOS Technology for Mixed Analog-Digital Applications with Complementary Bipolar Transistors
Author :
Arndt, J. ; Conze, P.
Author_Institution :
TELEFUNKEN electronic GmbH Theresienstra?ƒ\x9fe 2, D-W7100 Heilbronn
Abstract :
BICMOS 3 is a submicron BiCMOS technology with high analog capability which exhibits vertical isolated NPN and PNP transistors, precise poly-Si/n+ capacitors and resistors and fast 0.8 μm CMOS with TiSi gates. The bipolar transistors are capable of 8 V supply voltage, the CMOS part is designed for 5 V operation. The aimed application field is telecommunications with focus on GSM cellular radio.
Keywords :
Analog-digital conversion; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Capacitors; GSM; Isolation technology; Land mobile radio cellular systems; Resistors; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
