Title :
Hydrodynamic Simulation of an n-MOSFET at 77 K
Author :
Leone, A. ; Gnudi, A. ; Baccarani, G.
Author_Institution :
Dipartimento di Elettronica Informatica e Sistemistica, Universit?ƒ\xa0 di Bologna, viale Risorgimento 2, 40136 Bologna, Italy
Abstract :
The feasibility of and the numerical problems related with the hydrodynamic simulation of semiconductor devices operating at liquid nitrogen temperature are investigated. The model includes electron energy balance, degeneracy effects due to Fermi statistics as well as incomplete ionization. Simulation results of a submicron MOSFET are discussed.
Keywords :
Charge carrier processes; Electrons; High definition video; Hydrodynamics; Ionization; MOSFET circuits; Mathematical model; Poisson equations; Statistics; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
