Title :
Heteroepitaxial or epitaxial lift-off approach for future optoelectronic GaAs MESFET/InP optical switch integration ?
Author :
Pollentier, I. ; Buydens, L. ; Van Daele, Peter ; Demeester, P.
Author_Institution :
University of Gent-Laboratory of Electromagnetism and Acoustics?‚??IMEC, St.-Pietersnieuwstraat 41, B-9000 Gent
Abstract :
Two advanced processes for opto-electronic integration on InP, nl. heteroepitaxial growth and epitaxial lift-off, are described. Both are based on the well developed GaAs MESFET technology implemented on InP and have promising advantages compared to hybrid integration.
Keywords :
Bonding; Epitaxial growth; Gallium arsenide; Indium phosphide; MESFET integrated circuits; Optical switches; Substrates; Switching circuits; Temperature; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
