Title :
Analytical Device Model including Velocity Overshoot Effect for Ultra Small MOSFETs
Author :
Sonoda, K. ; Taniguchi, K. ; Hamaguchi, C.
Author_Institution :
Department of Electronic Engineering, Osaka University, Yamada-oka, Suita 565, Japan
Abstract :
A new analytical device model applicable to deep sub-micron MOSFETs is proposed. The new pseudo two-dimensional model includes velocity overshoot effect by the use of the extended drift-diffusion (EDD) model. Calculated current voltage characterisitcs agree well with the reported device characteristics of deep sub-micron MOSFETs. The model is found to be applicable to small geometry MOSFETs down to L=0.1 ¿m.
Keywords :
Analytical models; Electric variables; Electron mobility; Equations; MOSFETs; Microelectronics; Predictive models; Solid modeling; Transconductance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
