DocumentCode
3573159
Title
Amorphous Silicon Photodiodes for X-Ray Survey Monitoring
Author
Manfredotti, C. ; Fizzotti, F. ; Vittone, E. ; Boero, M. ; Sacchi, E. ; Nastasi, U.
Author_Institution
Experimental Physics Dept., University of Torino, via P. Giuria 1, I-10125 Torino (Italy); National Institute for Nuclear Physics, Section of Torino (Italy)
fYear
1994
Firstpage
395
Lastpage
397
Abstract
A new kind of X-ray dosimeter which can be used both as a survey meter and as a personal badge-type dosimeter has been realized and tested in different irradiation conditions. This dosimeter operates without any applied voltage, it can be read either by a picoammeter or by a digital voltmeter and it can work both in exposure rate and in exposure mode. The dosimeter has been realized by coupling an a-Si: H p-i-n photodiode to a CsI(TI) scintillator. Tests have been performed from 67 to 240 keV peak energy and at 662 keV (137 Cs). The sensitivity has been found to be below 1 mR/h in exposure rate mode and below 1 ¿R in exposure mode. Suitable filtering can be used in order to reconstruct the effective X-ray energy.
Keywords
Amorphous silicon; Chromium; Detectors; Electrodes; Etching; Monitoring; PIN photodiodes; Photoconductivity; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Print_ISBN
863321579
Type
conf
Filename
5435744
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