Title :
Thin Oxide MOS Damages Caused by Wafer Charging in Magnetized Helium Plasma
Author_Institution :
Institute of Solid-State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Blvd, Sofia 1784, BULGARIA
Abstract :
The effect of nonuniform He plasma on the properties of thin Si - SiO2 structures has been studied. The plasma reactor system used is a magnetically enhanced like reactive ion etch reactor. The damage effects in MOS structures were determined as a function of Al gate thickness (60 - 1000nm) and plasma parameters. The results indicate strong correlation between plasma induced charge build-up and Al gate thickness. The role of plasma nonuniformity as well as VUV are discussed.
Keywords :
Electrodes; Etching; Helium; Inductors; Plasma applications; Plasma confinement; Plasma density; Plasma devices; Plasma materials processing; Plasma properties;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
