• DocumentCode
    3573235
  • Title

    Microwave Noise of Hot Electrons in AlxGa1-xAs Channel

  • Author

    de Murcia, M. ; Richard, E. ; Benvenuti, A.

  • Author_Institution
    Centre d´´Electronique de Montpellier, URA CNRS 391, Universit?ƒ?©-Montpellier II, Place E. Bataillon.34095 Montpellier Cedex 5, France.
  • fYear
    1994
  • Firstpage
    555
  • Lastpage
    558
  • Abstract
    We present experimental results of hot electron noise in Si doped n+nn+ AlxGa1-xAs structures with x=0.15, 0.2 and 0.25 using H.F.pulsed noise measurements. Noise temperature and longitudinal diffusion coefficient as functions of field strength are compared with Si doped GaAs data. Results are discussed from the point of view of electron scattering mechanisms. The possibility of self-heating effects in AlGaAs devices influencing hot electron noise temperature measurements have been also investigated.
  • Keywords
    Electrons; Gallium arsenide; Microwave devices; Microwave theory and techniques; Noise measurement; Performance evaluation; Pulse measurements; Scattering parameters; Temperature measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Print_ISBN
    863321579
  • Type

    conf

  • Filename
    5435779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3573235