Title :
New Method for the Extraction of the Gate Voltage Dependence of the Series Resistance in CMOS Transistors
Author :
Brut, H. ; Ghibaudo, G. ; Juge, A.
Author_Institution :
SGS-THOMSON Microelectronics BP 16, 38921 Crolles, France; LPCS, ENSERG, BP 257, 38016 Grenoble, France
Abstract :
The resistance based extraction method for the determination of effective channel length and series resistance behaviour with gate bias is critically analysed. The impossibility of extracting the gate voltage variations of these parameters concurrently is demonstrated. Then both new approach and parameter extraction procedure are given and experimentally applied to several technologies from 1.2¿m down to 0.35¿m technologies.
Keywords :
CMOS process; CMOS technology; Circuit synthesis; Design engineering; Linear predictive coding; MOS devices; Microelectronics; Parameter extraction; Semiconductor device modeling; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
