Title :
Electrical and Optical Properties of Intersubband Infrared Phototransistors with Nonuniformly Doped Quantum Well
Author :
Ryzhii, V. ; Khmyrova, I. ; Ershov, M. ; Iizuka, T.
Author_Institution :
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu City, 965-80, Japan
Abstract :
The effect of random fluctuations of the donor density in the quantum well of an intersubband single quantum-well infrared phototransistor (QWIPT) with triangular emitter and collector barriers is studied theoretically. It is shown that the fluctuations of the donor distribution in the plane of the QW can significantly increase the dark current. It reduces the photocurrent-to-dark ratio and detectivity.
Keywords :
Dark current; Doping; Electron optics; Fluctuations; Optical computing; Phototransistors; Poisson equations; Quantum computing; Quantum wells; Stimulated emission;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
