Title :
Controllable S-doping of graphene through annealing with hydrogen sulfide
Author :
Chen Liang ; Yi Wang ; Yuelin Wang ; Tie Li
Author_Institution :
Sci. & Technol. on Microsyst. Lab., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
In this paper, an annealing method with hydrogen sulflde was employed for Sulfur-doping of graphene. Both copper and SiO2 were used as substrate in the experiment and the results showed that SiO2 was more proper for S-doping of graphene. Raman and EDS spectra indicated that sulfur atoms are doped into the graphene after annealing. By this way, graphene could be easily S-doped and the S-doping density could be controlled by varying the doping time.
Keywords :
Raman spectra; annealing; copper; graphene; hydrogen compounds; silicon compounds; sulphur; Cu; EDS spectra; H2S; Raman spectra; S:C; SiO2; annealing method; controllable doping; graphene; Annealing; Copper; Doping; Films; Graphene; Scanning electron microscopy; Substrates; Raman spectrum; Sulfur-doping; graphene; hydrogen sulfide;
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2014 Symposium on
Print_ISBN :
978-2-35500-028-7
DOI :
10.1109/DTIP.2014.7056646
