Title :
Low-noise CMOS amplifier for readout electronic of resistive NEMS audio sensor
Author :
Nebhen, J. ; Savary, E. ; Rahajandraibe, W. ; Dufaza, C. ; Meillere, S. ; Kussener, E. ; Barthelemy, H. ; Czarny, J. ; Lhermet, H.
Author_Institution :
IM2NP, Aix Marseille Univ., Marseille, France
Abstract :
Investigation of readout electronic dedicated to electromechanical audio sensor is presented. The circuit is able of reading piezoresistive gauge implemented with silicon nanowire (NEMS) and bring electromechanical signal to high-resolution digital output. Low-noise low-power CMOS operational transconductance amplifier (OTA) is presented. The low-noise amplifier (LNA) has been designed in a 0.28 μm CMOS process with a 2.5 V supply voltage and occupies an area of 120 × 160 μm2. For the Post-layout Simulation, the OTA achieves a 65 dB DC gain. It achieves a noise floor of 6 nV/√Hz within the frequency range from 1 Hz to 10 kHz. The total power consumption including the common mode feedback circuit (CMFB) and the biasing circuit is 150 μW.
Keywords :
CMOS integrated circuits; audio-frequency amplifiers; low noise amplifiers; nanosensors; nanowires; operational amplifiers; piezoresistive devices; power consumption; readout electronics; silicon; CMFB; DC gain; LNA; OTA; Si; biasing circuit; common mode feedback circuit; electromechanical audio sensor; electromechanical signal; frequency 1 Hz to 10 kHz; gain 65 dB; high-resolution digital output; low noise CMOS amplifier; low-power CMOS operational transconductance amplifier; nanowire; noise floor; piezoresistive gauge; post-layout simulation; power 150 muW; power consumption; readout electronic; resistive NEMS audio sensor; size 0.28 mum; supply voltage; voltage 2.5 V; CMOS integrated circuits; Gain; Microphones; Modulation; Noise; Power demand; Silicon; Audio sensor; LNA; Low-noise; MEMS microphone; OTA;
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2014 Symposium on
Print_ISBN :
978-2-35500-028-7
DOI :
10.1109/DTIP.2014.7056676
