Title :
Reduction in the de-magnetization effect in bit patterned media using WO3 nanowires
Author :
Gopalakrishnan, C. ; Ganesh, K.R. ; Ramaswamy, S. ; Jegannathan, K.
Author_Institution :
Nanotechnol. Res. Center, SRM Univ., Nagar, India
Abstract :
In a bit patterned media, the nanofabricated islands tends to vary in shape, material properties and size, which leads to the variation in switching fields causing read and write errors. Another contributing factor to this issue is the demagnetizing effects caused by adjacent bits. Even-though such a demagnetization effect in perpendicular storage media is comparatively less than parallel media; it possesses a great challenge when it comes to very high density bit patterning. Several patterning methodologies like varying the size, shape, distance between bits and incorporation of anti ferromagnetic and diamagnetic materials as shields in between bits has been tried out to overcome this issue.
Keywords :
demagnetisation; magnetic switching; nanowires; perpendicular magnetic recording; tungsten compounds; WO3; antiferromagnetic materials; bit patterned media; de-magnetization effect; diamagnetic materials; high density bit patterning; nanofabricated islands; nanowires; perpendicular storage media; read error; switching fields; write error; Nanowires;
Conference_Titel :
APMRC, 2010 Digest
Print_ISBN :
978-1-4244-8103-3