Effect of substrate temperature on physical properties of In2S3 films with [S]/[In] =3 ratio

This paper presents the preparation process of indium sulfide (In₂S₃) films, using the chemical spray pyrolysis technique at different substrate temperatures with a ratio [S]/[In] equal to 3. The films were deposited on glass substrates, using as precursor solution indium chloride and thiourea dissolved in distilled water. The films were characterized using X-ray diffraction (XRD), and optical transmission. X-ray diffraction has shown that the In₂S₃ material is the main phase present in these films and that the allotropic structure of this phase is affected by the substrate temperature. The optical transmittance of In₂S₃ films varies in accordance with the substrate temperature. The average transmission in the visible region exceeds 70% and the optical band gap of the films increases from 2.47 to 2.62 eV.