• DocumentCode
    3577829
  • Title

    Investigation of power dissipation for ReRAM in crossbar array architecture

  • Author

    Wookyung Sun ; Hyein Lim ; Hyungsoon Shin ; Wootae Lee

  • Author_Institution
    Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1~2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about Vdd/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes.
  • Keywords
    leakage currents; low-power electronics; resistive RAM; ReRAM; array size; bias schemes; crossbar array architecture; power consumption; power dissipation; selector leakage current; Arrays; Leakage currents; Power demand; Power dissipation; Resistors; Switches; ReRAM; crossbar array; power dissipation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
  • Print_ISBN
    978-1-4799-4203-9
  • Type

    conf

  • DOI
    10.1109/NVMTS.2014.7060847
  • Filename
    7060847