DocumentCode
3577829
Title
Investigation of power dissipation for ReRAM in crossbar array architecture
Author
Wookyung Sun ; Hyein Lim ; Hyungsoon Shin ; Wootae Lee
Author_Institution
Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
fYear
2014
Firstpage
1
Lastpage
4
Abstract
Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1~2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about Vdd/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes.
Keywords
leakage currents; low-power electronics; resistive RAM; ReRAM; array size; bias schemes; crossbar array architecture; power consumption; power dissipation; selector leakage current; Arrays; Leakage currents; Power demand; Power dissipation; Resistors; Switches; ReRAM; crossbar array; power dissipation;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Print_ISBN
978-1-4799-4203-9
Type
conf
DOI
10.1109/NVMTS.2014.7060847
Filename
7060847
Link To Document