Investigation of HfO2/Ti based vertical RRAM - Performances and variability

Author

Piccolboni, G. ; Molas, G. ; Carabasse, C. ; Nodin, J.F. ; Pellissier, C. ; Brianceau, P. ; Vianello, E. ; Pollet, O. ; Perrin, F. ; Cluzel, J. ; Toffoli, A. ; Aussenac, F. ; Delaye, V. ; Ghibaudo, G. ; De Salvo, B. ; Perniola, L.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

Firstpage

1

Lastpage

5

Abstract

An easy-to-fabricate, low-cost, sidewall TiN/HfO₂/Ti vertical resistive RAM (VRRAM) device is proposed. Devices with bottom electrode thickness down to 10nm were fabricated and characterized. Forming, SET and RESET voltages of respectively 2V, 0.5V and -0.5V were measured. A stable memory window of one decade was maintained after 10⁵s at 200°C. The impact of scaling on the operating voltages and memory resistance levels was evaluated, showing a SET and RESET voltage reduction as the cell diameter is reduced. Finally the cycle-to-cycle resistance variability was addressed.

Keywords

electrodes; hafnium compounds; resistive RAM; titanium; titanium compounds; RESET voltage reduction; SET voltage reduction; TiN-HfO₂-Ti; VRRAM; bottom electrode thickness; cycle-to-cycle resistance variability; stable memory window; temperature 200 degC; vertical resistive RAM; voltage -0.5 V; voltage 0.5 V; voltage 2 V; Electrodes; Hafnium compounds; Random access memory; Resistance; Tin; Voltage control; Voltage measurement; HfO2; OXRAM; Scaling; Ti; Vertical RAM; resistive RAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual

Print_ISBN

978-1-4799-4203-9

Type

conf

DOI

10.1109/NVMTS.2014.7060867

Filename

7060867