DocumentCode
3577997
Title
Development of a radiation-hardened 0.18 µm CMOS standard cell library for space applications
Author
Jia Liu ; Weidong Yang ; RuiTao Zhang ; XiaoGang Feng ; Yuxin Wang ; Guangbing Chen ; Ruzhang Li ; Yao Li ; Jing Yang ; Dongbing Fu
Author_Institution
Sci. & Technol. on Analog Integrated Circuit Lab., Chongqing, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
The radiation-hardened standard cell library can greatly improve the life-time and reliability of ASICs used in space applications. In this paper, we have discussed several radiation-hardened techniques, and have used SPICE simulation to validate these approaches. Finally, using these RH techniques, we have developed a radiation-hardened standard cell library based on 0.18 μm CMOS technology.
Keywords
CMOS integrated circuits; SPICE; application specific integrated circuits; integrated circuit design; integrated circuit reliability; radiation hardening (electronics); space vehicle electronics; ASIC reliability; SPICE simulation; radiation hardened CMOS standard cell library; size 0.18 mum; space applications; CMOS integrated circuits; Contracts; Laboratories; Radiation effects; Radiation hardening (electronics); Standards; CMOS; radiation-hardened; standard-cell library;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061073
Filename
7061073
Link To Document