Title :
Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test
Author :
Guoyan Zhang ; Aihua Dong ; Nie Liu ; Rui Tian ; Xuejiao Yang ; Zhiwei Liu ; Kohui Lee ; Horng-Chih Lin ; Liou, Juin J. ; Wang Yuxin
Author_Institution :
Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Electrostatic discharge (ESD) characters of Nanowire Field Effect Transistors have been tested and analyzed in detail in this paper. TLP (transmission line pulsing technique) and semiconductor characterization system have been used for experiments. The failure currents and leakage currents of Nanowire Field Effect Transistor are characterized. Also, physical insights and failure model are provided to analyze the failure mechanism.
Keywords :
electrostatic discharge; failure analysis; field effect transistors; nanowires; semiconductor device reliability; ESD characters; TLP test; electrostatic discharge characters; failure analysis; failure currents; failure mechanism; failure model; gate-all-around nanowire field effect transistor; leakage currents; semiconductor characterization system; transmission line pulsing technique; Dielectrics; Educational institutions; Electrostatic discharges; Failure analysis; Field effect transistors; Logic gates; Nanoscale devices; Electrostatic discharge (ESD); Failure analysis; Nanowire FET; TLP;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061114
