Title :
Atomistic simulation of phase change memory during switching
Author :
Yihan Chen ; Lining Zhang ; Mansun Chan ; King Tai Cheung ; Yin Wang ; Jian Wang
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A methodology to study phase-change memory programming at atomistic level during SET and RESET operations is presented. Based on the melt-quench scheme, the molecular dynamic for amorphization and crystallization of GeTe been investigated. The time evolution of the crystal structure under different annealing and quenching conditions has been demonstrated. The final structure under different SET and RESET conditions can be predicted using the proposed method.
Keywords :
amorphisation; annealing; crystal structure; crystallisation; germanium alloys; molecular electronic states; phase change memories; switching circuits; tellurium alloys; GeTe; RESET operations; amorphization; annealing; atomistic level; atomistic simulation; crystal structure; crystallization; melt-quench scheme; molecular dynamic; phase-change memory programming; quenching conditions; time evolution; Atomic measurements; Crystallization; Phase change materials; Resource description framework; amorphization; crystallization; molecular dynamics; phase change material;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061201
