Title :
Double-gate tunneling FET with asymmetric gate structure and pocket source
Author :
Dan Li ; Haijun Lou ; Xinnan Lin ; Lining Zhang ; Mansun Chan
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
In this paper, asymmetric gate structure and pocket source are proposed into the double-gate tunneling FET (DG TFET). Steeper average subthreshold swing (SS) and larger on currents are observed in the proposed TFET as compared with conventional TFET. The improvements are attributed to a larger volume tunneling due to the enhanced body electric field. In addition, threshold voltage adjustment is achieved by adjusting the pocket source thickness, which indicates the potential for supply voltage scaling.
Keywords :
field effect transistors; tunnelling; DG TFET; SS; asymmetric gate structure; double-gate tunneling field-effect transistor; enhanced body electric field; pocket source; steeper average subthreshold swing; supply voltage scaling; threshold voltage adjustment; volume tunneling; Electric potential; Field effect transistors; Logic gates; asymmetric structure; double-gate tunneling FET; volume tunneling;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061238
